A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assembled as a source follower between the sense node and a read circuit, wherein the oxide thickness of the third transistor is smaller than that of the first and second transistors, the voltage difference between the first and second reference potentials is greater than the maximum voltage capable of being applied between two terminals of the third transistor, and the body or drain region of the third transistor is connected to a third reference potential in the range between the first and second potentials. - See more at: http://www.patentbuddy.com/Patent/20160013238#sthash.8KpPKnhw.dpuf