In this work we present an ultra-high-frequency (UHF) single crystal silicon ring resonator with two embedded FETs. Electromechanical coupling is realized through a high-K, namely 10 nm HfO2, dielectric solid-gap sandwiched between the gate electrode and the ring lateral surface. The higher permittivity of the solid-gap material as well as the technological possibility of having narrower gap than air-gap counterparts, will uniquely allow to improve at the same time the electromechanical coupling and the FET amplifcation by increasing the gate capacitance.