000215035 001__ 215035
000215035 005__ 20190330094140.0
000215035 0247_ $$2doi$$a10.1002/sia.5927
000215035 022__ $$a0142-2421
000215035 02470 $$2ISI$$a000379680000058
000215035 037__ $$aARTICLE
000215035 245__ $$aIn situ core-level and valence-band photoelectron spectroscopy of reactively sputtered tungsten oxide films
000215035 260__ $$bWiley-Blackwell$$c2016$$aHoboken
000215035 269__ $$a2016
000215035 300__ $$a4
000215035 336__ $$aJournal Articles
000215035 520__ $$aIn this paper, we study tungsten oxides deposited by reactive magnetron sputtering. The total working pressure during deposition was varied in order to obtain different morphology. The effects on the electronic properties and chemical composition were studied by XPS and UPS. It was observed that, for the same argon to oxygen ratio in the gas feed, the decrease in total working pressure implies a decrease of the oxygen content in the film. In the nearly stoichiometric WO3 films, W 4f5/2 and W 4f7/2 form a distinct doublet peak. In sub-stoichiometric films, the films do not exhibit a well-resolved doublet and suggest multiple oxidation states of tungsten.The valence-band spectra of the sub-stoichiometric samples present an additional feature below the Fermi edge (~0.5 eV). This peak is assigned to W 5d1 because of the presence of W5+. It is consistent with the changes on the core-level spectra. XPS results, UPS features, and visual aspect are in agreement and suggest that the total working pressure has a strong influence on the oxygen content and therefore on the oxidation state of tungsten in the films.
000215035 6531_ $$atunsten oxide
000215035 6531_ $$aXPS
000215035 6531_ $$aUPS
000215035 6531_ $$amagnetron sputtering
000215035 6531_ $$ain situ
000215035 700__ $$0247412$$g172872$$aBouvard, Olivia
000215035 700__ $$0249555$$g249462$$aKrammer, Anna
000215035 700__ $$0241357$$g146273$$aSchueler, Andreas
000215035 773__ $$j48$$tSurface and Interface Analysis$$k7$$q660-663
000215035 8564_ $$uhttp://onlinelibrary.wiley.com/doi/10.1002/sia.5927/full$$zURL
000215035 909C0 $$xU10262$$0252072$$pLESO-PB
000215035 909CO $$qGLOBAL_SET$$particle$$ooai:infoscience.tind.io:215035$$pENAC
000215035 917Z8 $$x106442
000215035 917Z8 $$x106442
000215035 917Z8 $$x106442
000215035 937__ $$aEPFL-ARTICLE-215035
000215035 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000215035 980__ $$aARTICLE