Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2

The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2 on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasipartide band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS2. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.


Publié dans:
Nano Letters, 15, 9, 5883-5887
Année
2015
Publisher:
Washington, Amer Chemical Soc
ISSN:
1530-6984
Mots-clefs:
Laboratoires:




 Notice créée le 2015-12-02, modifiée le 2018-09-13


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