Nonstoichiometric Low-Temperature Grown GaAs Nanowires

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.


Published in:
Nano Letters, 15, 10, 6440-6445
Year:
2015
Publisher:
Washington, American Chemical Society
ISSN:
1530-6984
Keywords:
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2015-12-02, last modified 2018-03-17

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