000214063 001__ 214063
000214063 005__ 20180913063443.0
000214063 0247_ $$2doi$$a10.1063/1.4932524
000214063 022__ $$a0003-6951
000214063 02470 $$2ISI$$a000363422100050
000214063 037__ $$aARTICLE
000214063 245__ $$aRoom temperature concurrent formation of ultra-dense arrays of ferroelectric domain walls
000214063 260__ $$aMelville$$bAmerican Institute of Physics$$c2015
000214063 269__ $$a2015
000214063 300__ $$a5
000214063 336__ $$aJournal Articles
000214063 520__ $$aProperties of ferroelectric domain walls are attractive for future nano- and optoelectronics. An important element is the potential to electrically erase/rewrite domain walls inside working devices. Dense domain wall patterns, formed upon cooling through the ferroelectric phase transition, were demonstrated. However, room temperature domain wall writing is done with a cantilever tip, one domain stripe at a time, and reduction of the inter-wall distance is limited by the tip diameter. Here, we show, at room temperature, controlled formation of arrays of domain walls with sub-tip-diameter spacing (i.e., inter-wall distance down to approximate to 10 nm). Each array contains 100-200 concurrently formed walls. Array rewriting is confirmed. The method is demonstrated in several materials. Dense domain pattern formation through a continuous electrode, practical for potential device applications, is also demonstrated. A quantitative theory of the phenomenon is provided. (C) 2015 AIP Publishing LLC.
000214063 700__ $$0245171$$aMtebwa, Mahamudu$$g190193
000214063 700__ $$0245598$$aFeigl, Ludwig$$g213195
000214063 700__ $$0245530$$aYudin, Petr$$g212515
000214063 700__ $$aMcgilly, Leo J.
000214063 700__ $$0246999$$aShapovalov, Konstantin$$g229173
000214063 700__ $$aTagantsev, Alexander K.
000214063 700__ $$0240019$$aSetter, Nava$$g106416
000214063 773__ $$j107$$k14$$q142903$$tApplied Physics Letters
000214063 909C0 $$0252012$$pLC$$xU10334
000214063 909CO $$ooai:infoscience.tind.io:214063$$pSTI$$particle
000214063 917Z8 $$x106416
000214063 937__ $$aEPFL-ARTICLE-214063
000214063 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000214063 980__ $$aARTICLE