Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures

We demonstrate a non-classical photon emitter at near infrared wavelength based on a single (In, Ga)As/GaAs epitaxially grown columnar quantum dot. Charged exciton complexes have been identified in magneto-photoluminescence. Photon auto-correlation histograms from the recombination of a trion confined in a columnar dot exhibit sub-Poissonian statistics with an antibunching dip yielding g((2))(0) values of 0.28 and 0.46 at temperature of 10 and 80 K, respectively. Our experimental findings allow considering the GaAs-based columnar quantum dot structure as an efficient single photon source operating at above liquid nitrogen temperatures, which in some characteristics can outperform the existing solutions of any material system. (C) 2015 AIP Publishing LLC.


Published in:
Applied Physics Letters, 106, 23, 233107
Year:
2015
Publisher:
Melville, Amer Inst Physics
ISSN:
0003-6951
Laboratories:




 Record created 2015-09-28, last modified 2018-01-28


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)