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research article
Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs
This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based model, are validated with technology computer-aided design simulations, and the figures of merit have been compared with the inversion mode FETs. For a given current, we found that the channel thermal noise is very similar for both architectures, whereas the IGN is slightly decreased in the JL FETs.
Type
research article
Web of Science ID
WOS:000358507600034
Authors
Publication date
2015
Published in
Volume
62
Issue
8
Start page
2593
End page
2597
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
September 28, 2015
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