Role of the gate in ballistic nanowire SOI MOSFETs

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting the similarities and differences between ballistic devices of 10 nm and 100 nm channel length, in an attempt to understand the electrostatics in a ballistic channel, especially the influence of the gate, source and drain terminals on the channel. (C) 2015 Elsevier Ltd. All rights reserved.


Published in:
Solid-State Electronics, 112, 24-28
Year:
2015
Publisher:
Oxford, Elsevier
ISSN:
0038-1101
Keywords:
Laboratories:




 Record created 2015-09-28, last modified 2018-03-17


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