Large area deposition in high vacuum with high thickness uniformity

The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.


Year:
2004
Other identifiers:
TTO: 6.0325
EPO Family ID: 29275950
Laboratories:




 Record created 2015-09-22, last modified 2018-09-13


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)