Semiconductor device

Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.


Year:
2012
Other identifiers:
TTO: 6.1022
EPO Family ID: 45812813
Laboratories:




 Record created 2015-09-22, last modified 2018-03-18


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