000211247 001__ 211247
000211247 005__ 20190317000249.0
000211247 020__ $$a978-1-4673-9894-7
000211247 037__ $$aCONF
000211247 245__ $$aSpintronic Majority Gates
000211247 269__ $$a2015
000211247 260__ $$c2015
000211247 336__ $$aConference Papers
000211247 520__ $$aIn this paper we present an overview of two types of majority gate devices based on spintronic phenomena. We compare the spin torque majority gate and the spin wave majority gate and describe work on these devices. We discuss operating conditions for the two device concepts, circuit implication and how these reflect on materials choices for device implementation.
000211247 700__ $$aRadu, I. P.
000211247 700__ $$aZografos, O.
000211247 700__ $$aVaysset, A.
000211247 700__ $$aCiubotaru, F.
000211247 700__ $$aYan, J.
000211247 700__ $$aSwerts, J.
000211247 700__ $$aRadisic, D.
000211247 700__ $$aBriggs, B.
000211247 700__ $$aSoree, B.
000211247 700__ $$aManfrini, M.
000211247 700__ $$aErcken, M.
000211247 700__ $$aWilson, C.
000211247 700__ $$aRaghavan, P.
000211247 700__ $$aAdelmann, C.
000211247 700__ $$aThean, A.
000211247 700__ $$aAmaru, Luca
000211247 700__ $$aGaillardon, Pierre-Emmanuel
000211247 700__ $$0240269$$g167918$$aDe Micheli, Giovanni
000211247 700__ $$aNikonov, D. E.
000211247 700__ $$aManipatruni, S.
000211247 700__ $$aYoung, I. A.
000211247 7112_ $$aIEEE International Electron Devices Meeting (IEDM)
000211247 773__ $$tProceedings of the IEEE International Electron Devices Meeting (IEDM)
000211247 8564_ $$uhttps://infoscience.epfl.ch/record/211247/files/IR_IEDM15.pdf$$zn/a$$s1361182$$yn/a
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000211247 917Z8 $$x112915
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000211247 937__ $$aEPFL-CONF-211247
000211247 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000211247 980__ $$aCONF