Modeling Memristive Biosensors

In the present work, a computational study is carried out investigating the relationship between the biosensing and the electrical characteristics of two-terminal Schottky- barrier silicon nanowire devices. The model suggested successfully reproduces computationally the experimentally obtained electrical behavior of the devices prior to and after the surface bio-modification. Throughout modeling and simulations, it is confirmed that the nanofabricated devices present electrical behavior fully equivalent to that of a memristor device, according to literature. Furthermore, the model introduced successfully reproduces computationally the voltage gap appearing in the current to voltage characteristics for nanowire devices with bio- modified surface. Overall, the present study confirms the implication of the memristive effect for bio sensing applications, therefore demonstrating the Memristive Biosensors.


Published in:
Proceedings of IEEE Sensors 2015, 1538-1541
Presented at:
IEEE Sensors 2015, Busan, South Korea, November 1-4, 2015
Year:
2015
ISBN:
978-1-4799-8203-5
Keywords:
Laboratories:




 Record created 2015-09-09, last modified 2018-12-03

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