Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

In this paper, we introduce the different modes of operation achievable with <i>Three-Independent-Gate Field-Effect Transistors</i> (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) the dynamic control of the threshold voltage; and (iii) the dynamic control of the subthreshold slope.


Publié dans:
Proceedings of the 10th IEEE Nanotechnology Materials and Devices Conference (NMDC)
Présenté à:
10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, Alaska, USA, September 13-16, 2015
Année
2015
Laboratoires:




 Notice créée le 2015-09-08, modifiée le 2018-09-13

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