Determination of oxygen content in MBE AlGaAs layers

Quantitative Secondary Ion Mass Spectrometry (SIMS) determination of oxygen incorporation in epitaxial AlGaAs/GaAs layers is strongly affected by the presence of oxygen adsorbed on the surface. By flooding the sample with oxygen isotope O18 during the analysis, one can account and correct for the influence of the adsorbed oxygen O16 species. After the background subtraction, the oxygen content can be determined from the measured ratio of AlO to Al or O to Al signals, knowing the relative sensitivity factors between these quantities as obtained from measurement of an O16 implanted standard.


Published in:
Helvetica Physica Acta, 61, 1-2
Presented at:
Falll Meeting of The Swiss Physical Society
Year:
1988
ISSN:
0018-0238
Laboratories:




 Record created 2015-08-31, last modified 2018-03-17


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