Conference paper

DC characterization and low-frequency noise in delta-doped, pulse-doped and uniformly-doped GaAs/AlGaAs MODFETs

We present a comparative study, at 300 K and at low longitudinal field, of the DC characteristics and the low-frequency noise in the drain current of GaAs/AlGaAs MODFETs which, ideally, differ only by the doping mode of the AlGaAs layer. The higher 1/f-like noise in the δ-doped structure is consistent with our previous suggestion that charge fluctuations under the gate contribute significantly to the 1/f-like noise. This work further indicates that the charge centers are related to the Si dopants under the gate.


    • EPFL-CONF-210890

    Record created on 2015-08-31, modified on 2017-05-12


  • There is no available fulltext. Please contact the lab or the authors.

Related material