DC characterization and low-frequency noise in delta-doped, pulse-doped and uniformly-doped GaAs/AlGaAs MODFETs

We present a comparative study, at 300 K and at low longitudinal field, of the DC characteristics and the low-frequency noise in the drain current of GaAs/AlGaAs MODFETs which, ideally, differ only by the doping mode of the AlGaAs layer. The higher 1/f-like noise in the δ-doped structure is consistent with our previous suggestion that charge fluctuations under the gate contribute significantly to the 1/f-like noise. This work further indicates that the charge centers are related to the Si dopants under the gate.

Published in:
Proceedings of the 23 rd European Solid State Device Research Conference, 447-450
Presented at:
23 rd European Solid State Device Research Conference (ESSDERC'93), Grenoble, France, Sept. 13-16, 1993

 Record created 2015-08-31, last modified 2018-03-17

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