Photoluminescence from the 2D electron-gas and many-body effects as a probe of the crystalline quality of pseudomorphic GaAs/InGaAs/AlGaAs and GaAs/n(GaAs)10(n+1)(InAs)m/AlGaAs MODFETs
Tabata, A.; Benyattou, T.; Guillot, G.; Baeta Moreira, M.V.; Py, M.A.
1994

Abstract

We have performed low temperature (5K) photoluminescence (PL) measurements in order to study the crystalline quality of pseudomorphic modulation-doped field effect transistors (MODFET's) grown by MBE. MODFET's based on GaAs/AlGaAs with either an InGaAs or a (GaAs)n(InAs)m short period superlattice (SPS) channel have been studied. On modulation doped structures, the presence of free carriers into the channel strongly affects the PL emission,. In this paper, we present a study of PL line shape of MODFET structures with different channel thicknesses and growth conditions. A correlation between the PL line shape and these parameters is clearly observed.

Details

Title Photoluminescence from the 2D electron-gas and many-body effects as a probe of the crystalline quality of pseudomorphic GaAs/InGaAs/AlGaAs and GaAs/n(GaAs)10(n+1)(InAs)m/AlGaAs MODFETs
Author(s) Tabata, A. ; Benyattou, T. ; Guillot, G. ; Baeta Moreira, M.V. ; Py, M.A.
Published in Materials Research Society Symposium Proceedings
Volume 326
Pages 537-542
Conference 1993 Fall Meeting of the Materials-Research-Society, BOSTON, MA, NOV 29-DEC 02, 1993
Date 1994
Publisher Materials Research Society
ISSN 0272-9172
DOI https://doi.org/10.1557/PROC-326-537
Laboratories LOEQ
Record Appears in Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Work outside EPFL
Conference Papers
Published
Record creation date 2015-08-31