Photoluminescence from the 2D electron-gas and many-body effects as a probe of the crystalline quality of pseudomorphic GaAs/InGaAs/AlGaAs and GaAs/n(GaAs)10(n+1)(InAs)m/AlGaAs MODFETs

We have performed low temperature (5K) photoluminescence (PL) measurements in order to study the crystalline quality of pseudomorphic modulation-doped field effect transistors (MODFET's) grown by MBE. MODFET's based on GaAs/AlGaAs with either an InGaAs or a (GaAs)n(InAs)m short period superlattice (SPS) channel have been studied. On modulation doped structures, the presence of free carriers into the channel strongly affects the PL emission,. In this paper, we present a study of PL line shape of MODFET structures with different channel thicknesses and growth conditions. A correlation between the PL line shape and these parameters is clearly observed.


Published in:
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, 326, 537-542
Presented at:
1993 Fall Meeting of the Materials-Research-Society, BOSTON, MA, NOV 29-DEC 02, 1993
Year:
1994
Publisher:
Materials Research Society
ISSN:
0272-9172
Laboratories:




 Record created 2015-08-31, last modified 2018-09-13


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