000210888 001__ 210888
000210888 005__ 20180317094529.0
000210888 037__ $$aCONF
000210888 245__ $$aLow-frequency Noise in Lattice-matched In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs
000210888 269__ $$a1996
000210888 260__ $$c1996
000210888 336__ $$aConference Papers
000210888 520__ $$aLow-frequency drain-current noise in lattice-matched InAlAs/InGaAs/InP HEMTs has been studied at low drain bias in a temperature range of 77 to 350 K. The 1/f noise was found to be strongly dependent on gate-source bias , which can be interpreted by taking into account the role played by the series resistance. The Hooge's parameter for 1/f noise were extrcated to be 1.5x10-3 for the InGaAs channel and 7x10-4 for the series resistance. Noise spectra analysis reveals two generation-recombination (G-R) noise components, which correspond to two traps with activation energies of 0.56 and 0.11 eV. Considering their different behavior upon gate-source bias and the DLTS results, we conclude that the 0.11 eV trap is located in the channel region while the 0.56 eV trap is most likely located in the Schottky barrier layer.
000210888 700__ $$aRen, L.
000210888 700__ $$aPy, M.A.
000210888 700__ $$aSpicher, J.
000210888 700__ $$aBühlmann, H.J.
000210888 700__ $$aBeck, M.
000210888 700__ $$0241437$$aIlegems, Marc$$g105443
000210888 7112_ $$a8th International Conference on Indium Phosphide and Related Materials$$cSCHWABISCH GMUND, GERMANY$$dAPR 21-25, 1996
000210888 773__ $$q364-367$$tIPRM'96 Conference Proceedings
000210888 909CO $$ooai:infoscience.tind.io:210888$$pSB$$pconf
000210888 909C0 $$0252003$$pLOEQ$$xU10156
000210888 917Z8 $$x106161
000210888 937__ $$aEPFL-CONF-210888
000210888 973__ $$aEPFL$$rNON-REVIEWED$$sACCEPTED
000210888 980__ $$aCONF