Low-frequency Noise in Lattice-matched In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs

Low-frequency drain-current noise in lattice-matched InAlAs/InGaAs/InP HEMTs has been studied at low drain bias in a temperature range of 77 to 350 K. The 1/f noise was found to be strongly dependent on gate-source bias , which can be interpreted by taking into account the role played by the series resistance. The Hooge's parameter for 1/f noise were extrcated to be 1.5x10-3 for the InGaAs channel and 7x10-4 for the series resistance. Noise spectra analysis reveals two generation-recombination (G-R) noise components, which correspond to two traps with activation energies of 0.56 and 0.11 eV. Considering their different behavior upon gate-source bias and the DLTS results, we conclude that the 0.11 eV trap is located in the channel region while the 0.56 eV trap is most likely located in the Schottky barrier layer.

Published in:
IPRM'96 Conference Proceedings, 364-367
Presented at:
8th International Conference on Indium Phosphide and Related Materials, SCHWABISCH GMUND, GERMANY, APR 21-25, 1996

 Record created 2015-08-31, last modified 2018-09-13

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