000210885 001__ 210885
000210885 005__ 20180317094529.0
000210885 037__ $$aCONF
000210885 245__ $$aInfluence of starin compensation in InAlAs/InGaAs pseudomorphic HEMTs on InP
000210885 269__ $$a1997
000210885 260__ $$b1997 IOP Publishing Ltd.$$c1997
000210885 336__ $$aConference Papers
000210885 520__ $$aInAlAs/InGaAs pseudomorphic HEMTs suffer from two drawbacks which can impede their future developments: a mechanical instability of their strained layers and a low breakdown voltage. In this work we study pseudomorphic structures where the channel and the spacer are strain compensated: the InGaAs channel is compressively strained and the InAlAs spacer is tensilely strained. This structure along with a non compensated reference are annealed up to 600 degrees C and photoluminescence measurements show that the compensated structure is more stable than the non compensated one. HEMTs processes on these structures exhibit a higher breakdown voltage on the compensated structure, related to a higher valence band offset.
000210885 700__ $$aLetarte, X.
000210885 700__ $$aTardy, J.
000210885 700__ $$aRojo Romeo, P.
000210885 700__ $$aVenet, T.
000210885 700__ $$aGendry, M.
000210885 700__ $$aLugand, C.
000210885 700__ $$aBenyattou, T.
000210885 700__ $$aGuillot, G.
000210885 700__ $$aAbraham, P.
000210885 700__ $$aPy, M.A.
000210885 700__ $$aBeck, M.
000210885 7112_ $$a23rd International Symposium on Compound Semiconductors$$cST PETERSBURG, RUSSIA$$dSEP 23-27, 1996
000210885 720_1 $$aShur, MS$$eed.
000210885 720_1 $$aSuris, RA$$eed.
000210885 773__ $$j155$$q535-538$$tINSTITUTE OF PHYSICS CONFERENCE SERIES
000210885 909CO $$ooai:infoscience.tind.io:210885$$pSB$$pconf
000210885 909C0 $$0252003$$pLOEQ$$xU10156
000210885 917Z8 $$x106161
000210885 937__ $$aEPFL-CONF-210885
000210885 973__ $$aOTHER$$rNON-REVIEWED$$sACCEPTED
000210885 980__ $$aCONF