Influence of starin compensation in InAlAs/InGaAs pseudomorphic HEMTs on InP

InAlAs/InGaAs pseudomorphic HEMTs suffer from two drawbacks which can impede their future developments: a mechanical instability of their strained layers and a low breakdown voltage. In this work we study pseudomorphic structures where the channel and the spacer are strain compensated: the InGaAs channel is compressively strained and the InAlAs spacer is tensilely strained. This structure along with a non compensated reference are annealed up to 600 degrees C and photoluminescence measurements show that the compensated structure is more stable than the non compensated one. HEMTs processes on these structures exhibit a higher breakdown voltage on the compensated structure, related to a higher valence band offset.


Editor(s):
Shur, MS
Suris, RA
Published in:
INSTITUTE OF PHYSICS CONFERENCE SERIES, 155, 535-538
Presented at:
23rd International Symposium on Compound Semiconductors, ST PETERSBURG, RUSSIA, SEP 23-27, 1996
Year:
1997
Publisher:
1997 IOP Publishing Ltd.
Laboratories:




 Record created 2015-08-31, last modified 2018-01-28


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)