On the lateral decomposition, growth mode and defect nucleation in the InxGa1-xAs channel of HEMT devices depending on the growth temperature, well thickness and mismatch
Peiro, F.; Ferrer, J.C.; Cornet, A.; Morante, J.R.; Beck, M.; Py, M.A.
1998

Abstract

We have investigated by TEM InAlAs/InGa1-xAs/InP heterostructures grown by Molecular Beam Epitaxy. Our interest has been focused on the effects of the growth temperature tin the range T-g=470 degrees C-->530 degrees C), well composition (x(In)=53%-->80%) and well thickness (t(w)=3nm-->14nm) on the development of lateral InGaAs decomposition, stacking fault and dislocation distributions and three-dimensional growth modes, the latest being :;train-induced or driven by the InGaAs decomposition. We have correlated 2DEG Hall mobility measurements with TEM results to explain the degradation and anisotropy of the 2DEG mobilities.

Details

Title On the lateral decomposition, growth mode and defect nucleation in the InxGa1-xAs channel of HEMT devices depending on the growth temperature, well thickness and mismatch
Author(s) Peiro, F. ; Ferrer, J.C. ; Cornet, A. ; Morante, J.R. ; Beck, M. ; Py, M.A.
Published in INSTITUTE OF PHYSICS CONFERENCE SERIES
Volume 160
Issue 491-494
Conference 7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP-VII), TEMPLIN, GERMANY, SEPT 07-10, 1997
Date 1998
Publisher Donecker, J; Rechenberg, I
Laboratories LOEQ
Record Appears in Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Work outside EPFL
Conference Papers
Published
Record creation date 2015-08-31

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