On the lateral decomposition, growth mode and defect nucleation in the InxGa1-xAs channel of HEMT devices depending on the growth temperature, well thickness and mismatch

We have investigated by TEM InAlAs/InGa1-xAs/InP heterostructures grown by Molecular Beam Epitaxy. Our interest has been focused on the effects of the growth temperature tin the range T-g=470 degrees C-->530 degrees C), well composition (x(In)=53%-->80%) and well thickness (t(w)=3nm-->14nm) on the development of lateral InGaAs decomposition, stacking fault and dislocation distributions and three-dimensional growth modes, the latest being :;train-induced or driven by the InGaAs decomposition. We have correlated 2DEG Hall mobility measurements with TEM results to explain the degradation and anisotropy of the 2DEG mobilities.


Published in:
INSTITUTE OF PHYSICS CONFERENCE SERIES, 160, 491-494
Presented at:
7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP-VII), TEMPLIN, GERMANY, SEPT 07-10, 1997
Year:
1998
Publisher:
Donecker, J; Rechenberg, I
Laboratories:




 Record created 2015-08-31, last modified 2018-03-17


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