Conference paper

On the lateral decomposition, growth mode and defect nucleation in the InxGa1-xAs channel of HEMT devices depending on the growth temperature, well thickness and mismatch

We have investigated by TEM InAlAs/InGa1-xAs/InP heterostructures grown by Molecular Beam Epitaxy. Our interest has been focused on the effects of the growth temperature tin the range T-g=470 degrees C-->530 degrees C), well composition (x(In)=53%-->80%) and well thickness (t(w)=3nm-->14nm) on the development of lateral InGaAs decomposition, stacking fault and dislocation distributions and three-dimensional growth modes, the latest being :;train-induced or driven by the InGaAs decomposition. We have correlated 2DEG Hall mobility measurements with TEM results to explain the degradation and anisotropy of the 2DEG mobilities.


    • EPFL-CONF-210884

    Record created on 2015-08-31, modified on 2017-05-12


  • There is no available fulltext. Please contact the lab or the authors.

Related material