On the lateral decomposition, growth mode and defect nucleation in the InxGa1-xAs channel of HEMT devices depending on the growth temperature, well thickness and mismatch
We have investigated by TEM InAlAs/InGa1-xAs/InP heterostructures grown by Molecular Beam Epitaxy. Our interest has been focused on the effects of the growth temperature tin the range T-g=470 degrees C-->530 degrees C), well composition (x(In)=53%-->80%) and well thickness (t(w)=3nm-->14nm) on the development of lateral InGaAs decomposition, stacking fault and dislocation distributions and three-dimensional growth modes, the latest being :;train-induced or driven by the InGaAs decomposition. We have correlated 2DEG Hall mobility measurements with TEM results to explain the degradation and anisotropy of the 2DEG mobilities.
Record created on 2015-08-31, modified on 2016-08-09