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conference paper
Growth and electrical characterization of GaN hydride VPE layers
2000
Institute of Physics Conference Series
Thick GaN layers grown by HVPE on different starting layers were examined. The resulting layers were found to be homogeneous with good crystalline and surface quality over the whole 2-inch wafer, strongly depending on the starting layers and gas phase composition. Electrical characterization by Hall measurements and C-V measurements on Schottky diodes was performed.
Type
conference paper
Authors
Zellwger, C.
•
Wagner, V.
•
Py, M.A.
•
Parillaud, H.
•
Bühlmann, H.J.
•
Ilegems, M.
Publication date
2000
Publisher
Published in
Institute of Physics Conference Series
Volume
166
Start page
445
End page
448
Peer reviewed
NON-REVIEWED
EPFL units
Event name | Event place | Event date |
Berlin, Germany | Aug. 2-26, 1999 | |
Available on Infoscience
August 31, 2015
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