Growth and electrical characterization of GaN hydride VPE layers
Thick GaN layers grown by HVPE on different starting layers were examined. The resulting layers were found to be homogeneous with good crystalline and surface quality over the whole 2-inch wafer, strongly depending on the starting layers and gas phase composition. Electrical characterization by Hall measurements and C-V measurements on Schottky diodes was performed.
Record created on 2015-08-31, modified on 2016-08-09