Growth and electrical characterization of GaN hydride VPE layers

Thick GaN layers grown by HVPE on different starting layers were examined. The resulting layers were found to be homogeneous with good crystalline and surface quality over the whole 2-inch wafer, strongly depending on the starting layers and gas phase composition. Electrical characterization by Hall measurements and C-V measurements on Schottky diodes was performed.


Published in:
Inst. Phys. Conf. Ser., 166, 445-448
Presented at:
26th International Symposium ond Compound Semiconductors, Berlin, Germany, Aug. 2-26, 1999
Year:
2000
Publisher:
2000 IOP Publishing Ltd.
Laboratories:




 Record created 2015-08-31, last modified 2018-09-13


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