000210881 001__ 210881
000210881 005__ 20180913063252.0
000210881 020__ $$a1-4244-0439-8
000210881 0247_ $$2doi$$a10.1109/IEDM.2006.346935
000210881 037__ $$aCONF
000210881 245__ $$aCan InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?
000210881 269__ $$a2006
000210881 260__ $$bIEEE$$c2006
000210881 336__ $$aConference Papers
000210881 520__ $$aThe performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed. With 0.25 mu m gate length the highest maximum output current density of more than 2 A/mm at room temperature and more than 3 A/mm at 77 K have been obtained even with sapphire substrates. Cut-off frequencies were f(T) = 50 GHz and f(MAX) = 60 GHz for 0.15 pm gate length without T-gate. Pulsed measurements reveal a less instable surface than in the case of AlGaN/GaN structures. Although limited by buffer layer leakage, with field plates a maximum drain bias of 100 V has been reached with these devices. The high chemical stability of this unstrained heterostructure and its surface has been demonstrated with successful operation at 1000 degrees C in vacuum. sapphire substrate [8]. The studied structure consists of 2 mu m thick GaN buffer, 1 nm thick AlN spacer layer and 13 ran thick AlInN barrier layer containing 81% A]. Hall Effect measurements at room temperature and at 77 K give a sheet carrier density Ns = 2.5x 1013 cm(-2), a sheet resistance of 210 Omega/square (RT) and 80 Omega/square (77 K) with a record electron mobility of 1170 cm 2 Ns and 3170 cm Ns respectively. NIESA isolation has been performed by dry etching in Argon plasma. For the ohmic contacts, a Ti/Al/Ni/Au metal sequence annealed at 890'C for 60 sec has been used. A contact resistance Rc = 0.7 n.mm has been obtained, as measured by TLM. Tle DrainSource distance is 2.5 pm. Ni/Au Schottky gates have been defined by e-beam lithography
000210881 700__ $$aMedjdoub, F.
000210881 700__ $$0240056$$aCarlin, J.-F.$$g104706
000210881 700__ $$aGonschorek, M.
000210881 700__ $$0240055$$aFeltin, Eric$$g165342
000210881 700__ $$aPy, M.A.
000210881 700__ $$aDucatteau, D.
000210881 700__ $$aGaquière, C.
000210881 700__ $$0(EPFLAUTH)101706$$aGrandjean, Daniel$$g101706
000210881 700__ $$aKohn, E.
000210881 7112_ $$aIEEE International Electron Devices Meeting$$cSan Francisco, CA$$dDEC 11-13, 2006
000210881 773__ $$q673-676$$tInternational Electron Devices Meeting
000210881 909C0 $$0252312$$pLASPE$$xU10946
000210881 909CO $$ooai:infoscience.tind.io:210881$$pconf$$pSB
000210881 917Z8 $$x106161
000210881 917Z8 $$x148230
000210881 937__ $$aEPFL-CONF-210881
000210881 973__ $$aOTHER$$rNON-REVIEWED$$sPUBLISHED
000210881 980__ $$aCONF