The quantum Hall effect as a standard to define the laboratory unit of resistance

A measurement system has been developed to determine the resistance of integer quantum Hall plateaux relative to a room-temperature reference resistor network of nominally the same values. Silicon MOSFET and GaAs-AlGaAs samples have been successfully fabricated and measured. The results confirm that the integer quantum Hall effect (QHE) may be used to monitor a group of standard resistors comprising the laboratory unit of resistance. They demonstrate the feasibility of defining the laboratory unit of resistance by adopting a value for the quantum Hall resistance h/e2.


Published in:
IEEE Transactions on Instrumentation and Measurement, IM-36, 2, 240-244
Year:
1987
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
1557-9662
Keywords:
Laboratories:




 Record created 2015-08-27, last modified 2018-03-17


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