Properties of alloyed AuGeNi-contacts on GaAs/Ga/AlAs-heterostructures

A reproducible and robust techique of contacting GaAs/GaAlAs heterostructures using an evaporated AuGeNi alloy has been developed. The behavior of the electrical contacts to the two-dimensional electron gas has been studied in the quantum Hall regime. Contact resistance values of typically 10-50 m-OMEGA are obtained which are stable with time and thermal cycling. This type of contact is therefore well suited to be used for precision measurements of the quantized Hall resistance.


Published in:
IEEE Transactions on Instrumentation and Measurement, 40, 2, 228-230
Year:
1991
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0018-9456
Keywords:
Laboratories:




 Record created 2015-08-27, last modified 2018-03-18


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