New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFET's) was investigated as a function of temperature and optical excitation, Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process is still present. The kink at low temperatures is suppressed by illumination with photons of energy above 1 eV. These results prove that this parasitic effect is mainly related to the presence of traps in the top layers.


Publié dans:
IEEE Electron Device Letters, 19, 5, 154-156
Année
1998
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
1558-0563
Mots-clefs:
Laboratoires:




 Notice créée le 2015-08-27, modifiée le 2018-12-03


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