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research article
New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs
The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFET's) was investigated as a function of temperature and optical excitation, Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process is still present. The kink at low temperatures is suppressed by illumination with photons of energy above 1 eV. These results prove that this parasitic effect is mainly related to the presence of traps in the top layers.
Type
research article
Authors
Publication date
1998
Published in
Volume
19
Issue
5
Start page
154
End page
156
Subjects
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
August 27, 2015
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