Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP
1999
Abstract
Strain-compensated InAlAs/lnGaAs HEMT structures, grown on InP substrate, have been investigated in terms of structural and electrical properties. From detailed x-ray diffraction (XRD) investigations the compensation index and the evolution of the strain state were measured. We show that a partial and controlled strain compensation significantly improves the structural quality and the thermal stability of HEMT structures as well as their electrical properties.
Details
Title
Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP
Author(s)
Letartre, Xavier ; Rojo-Romeo, Pedro ; Tardy, Jacques ; Bejar, Moez ; Gendry, Michel ; Py, Marcel André ; Beck, Matthias ; Bühlmann, Hans Jörg ; Ren, Lin ; Villar, Constantino ; Sanz-Hervas, Alfredo ; Serrano, Jose Javier ; Blanco, Jose Maria ; Aguilar, Miguel ; Marty, Olivier ; Soulière, Véronique ; Monteil, Yves
Published in
Japanese Journal of Applied Physics
Volume
38
Issue
Part 1, No. 2B
Pages
1169-1173
Date
1999
Publisher
Japan Society of Applied Physics
ISSN
1347-4065
Keywords
Laboratories
LOEQ
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2015-08-27