Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP

Strain-compensated InAlAs/lnGaAs HEMT structures, grown on InP substrate, have been investigated in terms of structural and electrical properties. From detailed x-ray diffraction (XRD) investigations the compensation index and the evolution of the strain state were measured. We show that a partial and controlled strain compensation significantly improves the structural quality and the thermal stability of HEMT structures as well as their electrical properties.


Published in:
Japanese Journal of Applied Physics, 38, Part 1, No. 2B, 1169-1173
Year:
1999
Publisher:
Japan Society of Applied Physics
ISSN:
1347-4065
Keywords:
Laboratories:




 Record created 2015-08-27, last modified 2018-01-28


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