DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology
1999
Details
Title
DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology
Author(s)
Okhonin, S. ; Py, M.A. ; Georgescu, B. ; Fischer, H. ; Risch, L.
Published in
IEEE Transactions on Electron Devices
Volume
46
Issue
7
Pages
1514-1517
Date
1999
Publisher
Institute of Electrical and Electronics Engineers
ISSN
0018-9383
Keywords
Laboratories
LOEQ
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2015-08-27