DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology


Published in:
IEEE Transactions on Electron Devices, 46, 7, 1514-1517
Year:
1999
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0018-9383
Keywords:
Laboratories:




 Record created 2015-08-27, last modified 2018-03-17


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