Comment on “Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors” [J. Appl. Phys. 91, 3318 (2002)]


Published in:
Journal of Applied Physics, 92, 8, 4840
Year:
2002
Publisher:
American Institute of Physics
ISSN:
0021-8979
Keywords:
Laboratories:




 Record created 2015-08-27, last modified 2018-03-17


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