000209858 001__ 209858
000209858 005__ 20180913063210.0
000209858 0247_ $$2doi$$a10.1002/pssa.201532326
000209858 022__ $$a1862-6300
000209858 02470 $$2ISI$$a000357679200024
000209858 037__ $$aARTICLE
000209858 245__ $$aCombinatorial HV-CVD survey of barium triisopropyl cyclopentadienyl and titanium tetraisopropoxide for the deposition of BaTiO3
000209858 269__ $$a2015
000209858 260__ $$aWeinheim$$bWiley-VCH Verlag Berlin$$c2015
000209858 300__ $$a7
000209858 336__ $$aJournal Articles
000209858 520__ $$aBarium titanate is a very promising material for the integration of optical communication into electronic integrated circuits. For a successful integration into CMOS compatible technology, a growth process has to be found which allows forming crystalline BaTiO3 at sufficiently low temperatures. We describe the combinatorial analysis of BaTiO3 formation by high vacuum chemical vapor deposition using barium triisopropyl cyclopentadienyl and titanium tetraisopropoxide as metal sources; water, oxygen, or ozone are used as oxidizing agents. We analyzed the impact of these oxidizing agents on the interaction of the precursor molecules on the substrate surface. Furthermore, we characterized the films concerning chemical composition and identified growth conditions leading to deposit composition corresponding to the stoichiometric BaTiO3 formation. XRD analysis confirms the formation of crystalline BaTiO3 phases for deposition temperatures as low as 370 °C.
000209858 6531_ $$abarium cyclopentadienyl
000209858 6531_ $$abarium titanate
000209858 6531_ $$achemical vapor deposition
000209858 6531_ $$acombinatorial experiments
000209858 6531_ $$atitanium isopropoxide
000209858 700__ $$aReinke, Michael
000209858 700__ $$aKuzminykh, Yury
000209858 700__ $$aHoffmann, Patrik
000209858 773__ $$j212$$k7$$q1556-1562$$tphysica status solidi (a)
000209858 8564_ $$s4851535$$uhttps://infoscience.epfl.ch/record/209858/files/Reinke-pssa2015.pdf$$yPublisher's version$$zPublisher's version
000209858 909C0 $$0252352$$pLPMAT$$xU12141
000209858 909CO $$ooai:infoscience.tind.io:209858$$pSTI$$particle
000209858 917Z8 $$x176629
000209858 917Z8 $$x176629
000209858 937__ $$aEPFL-ARTICLE-209858
000209858 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000209858 980__ $$aARTICLE