000209849 001__ 209849
000209849 005__ 20180913063209.0
000209849 0247_ $$2doi$$a10.1088/0953-8984/16/48/022
000209849 022__ $$a1361-648X
000209849 037__ $$aARTICLE
000209849 245__ $$aHybrid ferromagnet/semiconductor nanostructures: spin-valve effect and extraordinary magnetoresistance
000209849 260__ $$c2004
000209849 269__ $$a2004
000209849 336__ $$aJournal Articles
000209849 520__ $$aWe review our recent work on ferromagnet/semiconductor hybrid structures. In particular we focus on magnetotransport experiments performed on Co/InAs/Co hybrid structures fabricated on the cleaved edge of an InAs/InGaAs heterostructure. By modulation doping we inserted a high-mobility two-dimensional electron system (2DES) between the Co source and drain contacts which were separated by about 0.2 µm. This separation was smaller than the mean free path in the 2DES. Two additional metallic gate electrodes were integrated, thus forming a prototype spin field-effect transistor on a cleaved (110) surface of an InAs/InGaAs heterostructure. Intriguingly, we observe two characteristic magnetotransport signals at 4.2 K: (a) a hysteretic spin-valve-like signal and (b) a large positive magnetoresistance. We attribute the latter to the extraordinary magnetoresistance effect, i.e. the magnetic-field induced current redistribution between the Co contacts and the 2DES.
000209849 700__ $$aWittmann, Andreas
000209849 700__ $$aMöller, Claas-Henrik
000209849 700__ $$aKronenwerth, Oliver
000209849 700__ $$aHolz, Matthias
000209849 700__ $$0247076$$aGrundler, Dirk$$g212341
000209849 773__ $$j16$$k48$$qS5645-S5652$$tJournal of Physics: Condensed Matter
000209849 909C0 $$0252534$$pLMGN$$xU13021
000209849 909CO $$ooai:infoscience.tind.io:209849$$pSTI$$particle
000209849 917Z8 $$x144315
000209849 937__ $$aEPFL-ARTICLE-209849
000209849 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000209849 980__ $$aARTICLE