Multilevel devices of YBa/sub 2/Cu/sub 3/O/sub 7/ with NdGaO/sub 3/ barrier

We have fabricated YBa/sub 2/Cu/sub 3/O/sub 7/ ramp-type junctions incorporating a barrier layer of NdGaO/sub 3/ with a nominal thickness of 2 nm. The junctions exhibit pronounced Josephson effects and operate up to 82 K. The characteristics are well described within the resistively shunted junction model. We observe large hysteresis parameters /spl beta//sub c/ even at elevated temperatures. The output voltage of a high-T/sub c/ dc SQUID is found to benefit from the intrinsic junction capacitance.


Published in:
IEEE Transactions on Appiled Superconductivity, 5, 2, 2751-2754
Year:
1995
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
1051-8223
Laboratories:




 Record created 2015-07-08, last modified 2018-03-17


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