Journal article

Oscillatory Spin-Filtering due to Gate Control of Spin-Dependent Interface Conductance

Using the Landauer-Büttiker formalism, we study ballistic transport properties of an interface between a ferromagnetic metal and a mesoscopic two-dimensional electron system in a III-V semiconductor. We show that in a Sharvin point contact spin-filtering occurs due to band structure mismatch. Theory predicts a pronounced effect for Fe on InAs which can be controlled via a gate electrode.


Related material