Ballistic spin-filter transistor

Spin-dependent ballistic transport in a mesoscopic two-dimensional electron system with two metallic ferromagnetic electrodes is studied using the Landauer-Büttiker formalism. Our calculations predict a pronounced spin-valve effect in the ballistic regime for, e.g., Fe on InAs. The origin is spin filtering at the interfaces. In this spintronic device, the magnetoconductance ratio can be controlled via a gate voltage.


Published in:
Physical Review B, 63, 16
Year:
2001
ISSN:
1095-3795
Laboratories:




 Record created 2015-07-08, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)