000209797 001__ 209797
000209797 005__ 20181203023932.0
000209797 0247_ $$2doi$$a10.1016/S1386-9477(02)00184-4
000209797 022__ $$a1386-9477
000209797 037__ $$aARTICLE
000209797 245__ $$aSpin interference and Fabry–Pérot resonances in ferromagnet–semiconductor–ferromagnet devices
000209797 260__ $$bElsevier$$c2002
000209797 269__ $$a2002
000209797 336__ $$aJournal Articles
000209797 520__ $$aMagnetoconductance across permalloy/InAs(2DES)/permalloy double junctions in the ballistic limit is examined within the transfer-matrix formalism. We take into account Rashba spin–orbit interaction in the semiconductor as well as oblique modes in devices of finite widths and calculate conductance ratios ΔG/Ḡ between distinct geometries of the magnetizations in the source and drain electrodes. The appropriate spin-dependent boundary conditions yield magnetoconductance ratios ΔG/Ḡ of up to 1% and Fabry–Pérot type interferences.
000209797 700__ $$aMatsuyama, T
000209797 700__ $$aHu, C.-M
000209797 700__ $$aGrundler, D
000209797 700__ $$aMeier, G
000209797 700__ $$aHeitmann, D
000209797 700__ $$aMerkt, U
000209797 773__ $$j13$$k2-4$$q577-581$$tPhysica E: Low-dimensional Systems and Nanostructures
000209797 909C0 $$0252534$$pLMGN$$xU13021
000209797 909CO $$ooai:infoscience.tind.io:209797$$pSTI$$particle
000209797 917Z8 $$x144315
000209797 937__ $$aEPFL-ARTICLE-209797
000209797 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000209797 980__ $$aARTICLE