Spin interference and Fabry–Pérot resonances in ferromagnet–semiconductor–ferromagnet devices

Magnetoconductance across permalloy/InAs(2DES)/permalloy double junctions in the ballistic limit is examined within the transfer-matrix formalism. We take into account Rashba spin–orbit interaction in the semiconductor as well as oblique modes in devices of finite widths and calculate conductance ratios ΔG/Ḡ between distinct geometries of the magnetizations in the source and drain electrodes. The appropriate spin-dependent boundary conditions yield magnetoconductance ratios ΔG/Ḡ of up to 1% and Fabry–Pérot type interferences.


Published in:
Physica E: Low-dimensional Systems and Nanostructures, 13, 2-4, 577-581
Year:
2002
Publisher:
Elsevier
ISSN:
1386-9477
Laboratories:




 Record created 2015-07-08, last modified 2018-09-13


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