Magnetization of the Fractional Quantum Hall States

We observe electron magnetism originating from fractional quantum Hall states in single-layered GaAs heterojunctions. This magnetization is entirely governed by electron-electron interaction effects. The studies were performed at temperatures between 0.3 and 7 K on gated high-mobility two-dimensional electron systems. We observe oscillations in the magnetic moment at various fractional filling factors, both for ν<1 and ν>1, which persist up to 3.8 K. Most prominent features are found at filling factors 13, 23, 45, and 85. In addition, an intrinsic strongly asymmetric magnetization around ν=1 is observed.


Published in:
Physical Review Letters, 82, 4, 819-822
Year:
1999
ISSN:
1079-7114
Laboratories:




 Record created 2015-07-08, last modified 2018-03-17


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