Extraordinary magnetoresistance effect in a microstructured metal–semiconductor hybrid structure

We have fabricated hybrid structures consisting of a metallic thin film and of a microstructured two-dimensional electron system in an InAsheterostructure. The devices are found to exhibit a huge magnetoresistance(MR)effect in magnetic fields ⩽1 T . At low temperature, a value of ΔR/R=[R(B=1 T )−R(B=0)]/R(B=0) as high as 115 000% is measured. The value of ΔR/R has been studied as a function of the electron mobility, the electron density and the lateral width of the semiconductor. We find that the MReffect can be tailored by these different parameters and technological relevant devices can be realized.


Published in:
Applied Physics Letters, 80, 21, 3988
Year:
2002
Publisher:
American Institute of Physics
ISSN:
0003-6951
Laboratories:




 Record created 2015-07-08, last modified 2018-09-13


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