Semiconductor-metal hybrid structures can show a large magnetoresistance effect, the extraordinary magnetoresistance (EMR) effect. In this work, we study theoretically the influence of the voltage probe configuration on the magnetoresistance of such hybrid structures. We find a configuration, in which the current sensitivity of the device is enhanced considerably if compared to the probe configuration discussed so far in the literature. We argue that this enhancement is due to the combination of the EMR effect and the Hall effect in the hybrid structure.