Semiconductor-metal hybrid structures: novel perspective for read heads
Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ultrafast read heads. Based on the finite element method, we study the EMR and optimize the effect with respect to material parameters and geometry. As the important design rule we find that the width-to-length ratio of a rectangular device should be below 0.042. This holds for a broad regime of mobility Î¼ in the semiconductor and specific contact resistance Ïc between the semiconductor and the metal.
Keywords: Extraordinary magnetoresistance ; Finite element methods ; Geometry ; Magnetic devices ; Magnetic heads ; Magnetic materials ; Magnetic semiconductors ; Magnetic sensors ; Optimization methods ; Semiconductor materials ; extraordinary magnetoresistance effect ; finite element method ; geometry ; magnetic field measurement ; magnetic heads ; magnetic sensors ; magnetic-field sensors ; magnetoresistive devices ; material parameters ; mobility ; rectangular device ; semiconductor-metal boundaries ; semiconductor-metal hybrid structures ; specific contact resistance ; ultrafast read heads ; very large magnetoresistance effect
Record created on 2015-07-07, modified on 2016-08-09