000209678 001__ 209678
000209678 005__ 20180913063205.0
000209678 0247_ $$2doi$$a10.1007/s11664-008-0429-0
000209678 022__ $$a0361-5235
000209678 022__ $$a1543-186X
000209678 037__ $$aARTICLE
000209678 245__ $$aEpitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities
000209678 260__ $$c2008
000209678 269__ $$a2008
000209678 336__ $$aJournal Articles
000209678 520__ $$aLead chalcogenide (IV-VI narrow-gap semiconductor) layers on Si or BaF2(111) substrates are employed to realize two mid-infrared optoelectronic devices for the first time. A tunable resonant cavity enhanced detector is realized by employing a movable mirror. Tuning is across the 4 μm to 5.5 μm wavelength range, and linewidth is <0.1 μm. Due to the thin (0.3 μm) PbTe photodiode inside the cavity, a higher sensitivity at higher operating temperatures was achieved as compared to conventional thick photodiodes. The second device is an optically pumped vertical external-cavity surface-emitting laser with PbTe-based gain layers. It emits at ~5 μm wavelength and with output power up to 50 mW pulsed, or 3 mW continuous wave at 100 K.
000209678 6531_ $$aCharacterization and Evaluation of Materials
000209678 6531_ $$aElectronics and Microelectronics
000209678 6531_ $$aInstrumentation
000209678 6531_ $$aMid-infrared optoelectronic devices
000209678 6531_ $$aOptical and Electronic Materials
000209678 6531_ $$aRCED
000209678 6531_ $$aSolid State Physics and Spectroscopy
000209678 6531_ $$aVECSEL
000209678 6531_ $$aepitaxy
000209678 6531_ $$alead chalcogenides
000209678 700__ $$aZogg, H.
000209678 700__ $$aArnold, M.
000209678 700__ $$aFelder, F.
000209678 700__ $$aRahim, M.
000209678 700__ $$aEbneter, C.
000209678 700__ $$aZasavitskiy, I.
000209678 700__ $$0249161$$aQuack, Niels$$g136108
000209678 700__ $$aBlunier, S.
000209678 700__ $$aDual, J.
000209678 773__ $$j37$$k9$$q1497-1503$$tJournal of Electronic Materials
000209678 8564_ $$uhttp://link.springer.com/article/10.1007/s11664-008-0429-0$$zURL
000209678 909C0 $$0252536$$pQ-LAB$$xU13060
000209678 909CO $$ooai:infoscience.tind.io:209678$$pSTI$$particle
000209678 917Z8 $$x144315
000209678 917Z8 $$x144315
000209678 917Z8 $$x253580
000209678 937__ $$aEPFL-ARTICLE-209678
000209678 970__ $$azogg_epitaxial_2008/Q-LAB
000209678 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000209678 980__ $$aARTICLE