000209328 001__ 209328
000209328 005__ 20190416055547.0
000209328 0247_ $$2doi$$a10.1063/1.4923467
000209328 022__ $$a0003-6951
000209328 02470 $$2ISI$$a000357693200021
000209328 037__ $$aARTICLE
000209328 245__ $$aAssessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor
000209328 269__ $$a2015
000209328 260__ $$bAmerican Institute of Physics$$c2015$$aMelville
000209328 300__ $$a4
000209328 336__ $$aJournal Articles
000209328 520__ $$aWe investigate the effect of pseudo-bilayer configurations at low operating voltages (<0.5V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of the inversion layer for electrons. Resulting benefits from this setup are: improved electrostatic control on the channel, enhanced gate-to-gate efficiency and higher Ion levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.
000209328 6531_ $$aband-to-band tunneling
000209328 6531_ $$aheterogate electron-hole bilayer tunnel field-effect transistor
000209328 6531_ $$aquantum confinement
000209328 6531_ $$ainversion layer formation
000209328 700__ $$0249475$$g242255$$aPadilla de la Torre, José Luis
000209328 700__ $$0246495$$g200191$$aAlper, Cem
000209328 700__ $$aMedina-Bailón, Cristina
000209328 700__ $$aGámiz, Francisco
000209328 700__ $$aIonescu, Mihai Adrian$$g122431$$0241430
000209328 773__ $$j106$$tApplied Physics Letters$$k26$$q2621021-2621024
000209328 8564_ $$uhttps://infoscience.epfl.ch/record/209328/files/articulo_APL_pseudobilayer_HGEHBTFET.pdf$$zPublisher's version$$s1018732$$yPublisher's version
000209328 909C0 $$xU10328$$0252177$$pNANOLAB
000209328 909CO $$ooai:infoscience.tind.io:209328$$qGLOBAL_SET$$pSTI$$particle
000209328 917Z8 $$x242255
000209328 937__ $$aEPFL-ARTICLE-209328
000209328 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000209328 980__ $$aARTICLE