Elemental Topological Insulator with Tunable Fermi Level: Strained alpha-Sn on InSb(001)

We report on the epitaxial fabrication and electronic properties of a topological phase in strained alpha-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.


Publié dans:
Physical Review Letters, 111, 15
Année
2013
ISSN:
0031-9007
Laboratoires:




 Notice créée le 2015-06-23, modifiée le 2019-05-27


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