Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.


Editor(s):
Guina, M
Published in:
Vertical External Cavity Surface Emitting Lasers (Vecsels) V, 9349
Presented at:
Conference on Vertical External Cavity Surface Emitting Lasers (VECSELs) V, San Francisco, CA, FEB 09-10, 2015
Year:
2015
Publisher:
Bellingham, Spie-Int Soc Optical Engineering
ISSN:
0277-786X
ISBN:
978-1-62841-439-4
Keywords:
Laboratories:




 Record created 2015-05-29, last modified 2018-09-13


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